Memory storage apparatus and forming method of resistive memory device
US10658036B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2018 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Sep 28, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/0083
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A forming method of a resistive memory device is provided. The forming method includes: conducting a forming procedure to apply a forming voltage to the resistive memory device such that the resistive memory device changes from a high resistive state to a low resistive state and measuring a first current of the resistive memory device; performing a thermal step on the resistive memory device and measuring a second current of the resistive memory device; and comparing the second current to the first current and determining to apply a first voltage signal or a second voltage signal to the resistive memory device or to finish the forming procedure according to a comparison result of the first current and the second current. In addition, a memory storage apparatus including a resistive memory device is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.