Etching method and etching apparatus
US10658193B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 11, 2019 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Jan 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/334
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Roughness of an end surface portion of a step shape can be decreased. An etching method includes a first etching process and a second etching process. In the first etching process, etching is performed on a processing target object, which has a silicon-containing film thereon and a photoresist formed on a surface of the silicon-containing film and which is placed in a processing vessel, to etch the silicon-containing film by using the photoresist as a mask. In the second etching process, a first processing gas containing oxygen and halogen is supplied into the processing vessel, or a third processing gas containing the oxygen is supplied into the processing vessel after a second processing gas containing the halogen is supplied into the processing vessel. The first etching process and the second etching process are repeated a multiple number of times.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.