Dielectric film for semiconductor fabrication
US10658296B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2016 |
| Grant date | May 19, 2020 |
| Priority date | — |
| Expiry date | Sep 30, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/485
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for semiconductor manufacturing is disclosed. The method includes receiving a device having a first surface through which a first metal or an oxide of the first metal is exposed. The method further includes depositing a dielectric film having Si, N, C, and O over the first surface such that the dielectric film has a higher concentration of N and C in a first portion of the dielectric film near the first surface than in a second portion of the dielectric film further away from the first surface than the first portion. The method further includes forming a conductive feature over the dielectric film. The dielectric film electrically insulates the conductive feature from the first metal or the oxide of the first metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.