Method of programming nonvolatile memory cell
US10664239B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2018 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Sep 10, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY04S40/20
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a nonvolatile memory cell is provided according to an embodiment of the invention. The nonvolatile memory cell includes a substrate; and a select transistor, a following gate transistor, and an anti-fuse transistor comprising a first gate oxide layer, disposed on the substrate and coupled in series with each other. The programming method includes applying to said nonvolatile memory cell a variable DC voltage source comprising at least one high voltage part for forming a trapping path within the first gate oxide layer and at least one low voltage part for crystallizing the trapping path into a silicon filament.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.