Patent assignee · TW · COMPANY

EMEMORY TECHNOLOGY INC.

412Patents
341Active
412Granted
58Portfolio score

Filing activity: Aug 23, 1999 → May 10, 2024 · 45 expiring within 5 years

Most-cited patents

PatentTitleAreaCited byStatus
US7663928B2 Sense amplifier circuit having current mirror architecture Physics 419 Active
US6952129B2 Four-phase dual pumping circuit Electricity 119 Expired
US6418060B1 Method of programming and erasing non-volatile memory cells Electricity 78 Expired
US6678190B2 Single poly embedded eprom Physics 77 Expired
US8174063B2 Non-volatile semiconductor memory device with intrinsic charge trapping layer Electricity 62 Active
US9935113B2 Non-volatile memory and method for programming and reading a memory array having the same Emerging Cross-Sectional Technologies 57 Active
US9640259B2 Single-poly nonvolatile memory cell Physics 53 Active
US8592886B2 Erasable programmable single-ploy nonvolatile memory Physics 50 Active
US6920067B2 Integrated circuit embedded with single-poly non-volatile memory Physics 43 Expired
US9613714B1 One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method Emerging Cross-Sectional Technologies 43 Active
US6787419B2 Method of forming an embedded memory including forming three silicon or polysilicon layers Electricity 39 Expired
US7250654B2 Non-volatile memory device Electricity 39 Expired
US6809603B1 Ring oscillator having a stable output signal without influence of MOS devices Electricity 37 Expired
US7903472B2 Operating method of non-volatile memory Electricity 37 Active
US7999491B2 LED lighting control integrated circuit having embedded programmable nonvolatile memory Electricity 34 Active
US7172940B1 Method of fabricating an embedded non-volatile memory device Emerging Cross-Sectional Technologies 33 Expired
US7262457B2 Non-volatile memory cell Physics 32 Expired
US6441443B1 Embedded type flash memory structure and method for operating the same Physics 29 Expired
US6501685B2 Channel write/erase flash memory cell and its manufacturing method Electricity 28 Expired
US6489202B1 Structure of an embedded channel write-erase flash memory cell and fabricating method thereof Electricity 27 Expired
US6617637B1 Electrically erasable programmable logic device Physics 27 Expired
US7209392B2 Single poly non-volatile memory Electricity 27 Expired
US6728137B1 Method for programming and reading a plurality of one-time programmable memory blocks Physics 26 Expired
US6504626B1 Scanner with an external keyboard for controlling operations of the scanner Electricity 25 Expired
US7215043B2 Power supply voltage switch circuit Electricity 24 Expired

Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.