Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect
US10665310B2 · kind B2 · utility
1Cited by
1References
20Claims
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Key dates
| Filing date | Jan 28, 2019 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Jan 28, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5641
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A radiation hardened NAND flash memory data storage device suitable for space flight having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count. Methods of operating the data storage device are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.