Yue Li
33Patents
7h-index
33Co-inventors
65Inventor score
Filing activity: Jul 5, 2013 → Nov 29, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10811071B1 | Three-dimensional memory device with static random-access memory | Electricity | 11 | Active |
| US9870834B2 | Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect | Physics | 11 | Active |
| US9007241B2 | Reduced polar codes | Electricity | 11 | Active |
| US10909072B2 | Key value store snapshot in a distributed memory object architecture | Physics | 10 | Active |
| US9319073B2 | Mitigation of write errors in multi-level cell flash memory through adaptive error correction code decoding | Electricity | 8 | Active |
| US9209832B2 | Reduced polar codes | Electricity | 8 | Active |
| US9317365B2 | Soft decoding of polar codes | Electricity | 7 | Active |
| US10224111B2 | Error characterization and mitigation for 16 nm MLC NAND flash memory under total ionizing dose effect | Physics | 4 | Active |
| US11061609B2 | Distributed memory object method and system enabling memory-speed data access in a distributed environment | Physics | 4 | Active |
| US11221793B2 | Data buffering operation of three-dimensional memory device with static random-access memory | Physics | 3 | Active |
| US11150962B2 | Applying an allocation policy to capture memory calls using a memory allocation capture library | Physics | 1 | Active |
| US11200935B2 | Three-dimensional memory device with static random-access memory | Electricity | 1 | Active |
| US10803006B1 | Persistent memory key-value store in a distributed memory architecture | Physics | 1 | Active |
| US10665310B2 | Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect | Physics | 1 | Active |
| US9983808B2 | NAND flash reliability with rank modulation | Physics | 1 | Active |
| US11593186B2 | Multi-level caching to deploy local volatile memory, local persistent memory, and remote persistent memory | Physics | 1 | Active |
| US11922058B2 | Data buffering operation of three-dimensional memory device with static random-access memory | Physics | 1 | Active |
| US11907081B2 | Reduced impact application recovery | Physics | 0 | Active |
| US11134055B2 | Naming service in a distributed memory object architecture | Physics | 0 | Active |
| US10802972B2 | Distributed memory object apparatus and method enabling memory-speed data access for memory and storage semantics | Physics | 0 | Active |
| US9946475B2 | Joint rewriting and error correction in write-once memories | Physics | 0 | Active |
| US10379945B2 | Asymmetric error correction and flash-memory rewriting using polar codes | Electricity | 0 | Active |
| US11735243B2 | Three-dimensional memory device with static random-access memory | Electricity | 0 | Active |
| US11474739B2 | Cache program operation of three-dimensional memory device with static random-access memory | Electricity | 0 | Active |
| US11531600B2 | Persistent memory image capture | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.