Nonvolatile memory device configured to adjust a read parameter based on a degradation level
US10665312B2 · kind B2 · utility
3Cited by
11References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 8, 2018 |
| Grant date | May 26, 2020 |
| Priority date | — |
| Expiry date | Oct 8, 2038 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02D10/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory device may include a page buffer including a plurality of latch sets that latch each page datum of selected memory cells among a plurality of memory cells according to each of read signal sets including at least one read signal, and a control logic configured to detect a degradation level of the memory cells and determine a read parameter applied to at least one of the read signal sets based on the detected degradation level.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.