Patent · US Active

Semiconductor structure including a suspended membrane containing a central segment of structured thickness

US10666019B2 · kind B2 · utility

1Cited by

0References

13Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Vincent Reboud · Paris, FR
Alban Gassenq · Brioude, FR
Samuel Tardif · Grenoble, FR
Vincent Calvo · Fontaine, FR
Alexei Tchelnokov · Meylan, FR

Key dates

Filing date	Aug 2, 2018
Grant date	May 26, 2020
Priority date	—
Expiry date	Aug 9, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01S5/30
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A semiconductor structure including a semiconductor layer made of a crystalline semiconductor compound, a portion of the semiconductor layer which forms a suspended membrane above a carrier layer, the suspended membrane being formed from a tensilely stressed central segment and a plurality of lateral segments forming tensioning arms. The central segment includes at least one zone of thinned thickness.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.