Alexei Tchelnokov
18Patents
4h-index
29Co-inventors
56Inventor score
Filing activity: Jan 29, 2007 → May 5, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9401454B2 | Semiconducting structure with switchable emission zones, method of manufacturing such a structure and semiconducting device comprising such a structure | Electricity | 15 | Active |
| US10050080B2 | Optoelectronic device and method for manufacturing same | Electricity | 10 | Active |
| US9537050B2 | Optoelectronic device and method for manufacturing same | Emerging Cross-Sectional Technologies | 8 | Active |
| US8535962B2 | Method for making a light-emitting microelectronic device with semi-conducting nanowires formed on a metal substrate | Electricity | 5 | Active |
| US7881571B2 | Coupling device with compensated birefringence | Physics | 4 | Active |
| US8958670B2 | Device for coupling an electromagnetic wave between a waveguide and a slit metal guide, method for manufacturing such a device, and optical and electric coupler for an object using the optical coupling device | Performing Operations; Transporting | 3 | Active |
| US8285102B2 | Structure of a micronanostructure optical wave guide for controlling birefringence | Performing Operations; Transporting | 2 | Active |
| US10666019B2 | Semiconductor structure including a suspended membrane containing a central segment of structured thickness | Electricity | 1 | Active |
| US9774167B2 | Method of production of a semiconducting structure comprising a strained portion | Electricity | 1 | Active |
| US10699902B2 | Process for producing a strained layer based on germanium-tin | Electricity | 1 | Active |
| US7795575B2 | Light-emitting device with chromatic control | Electricity | 0 | Active |
| US8971371B2 | Laser device with coupled laser source and waveguide | Electricity | 0 | Active |
| US11430373B2 | LED display device | Electricity | 0 | Active |
| US10141370B2 | Optoelectronic device and method for manufacturing same | Electricity | 0 | Active |
| US9735317B2 | Method for forming a semiconducting portion by epitaxial growth on a strained portion | Electricity | 0 | Active |
| US10777701B2 | Photosensitive detector with self-aligned 3D junction and gate | Electricity | 0 | Active |
| US11165225B2 | Optoelectronic device comprising a central segment tensilely strained along a first axis and electrically biased along a second axis | Electricity | 0 | Active |
| US11251339B2 | Process for fabricating an optoelectronic device for emitting infrared light comprising a GeSn-based active layer | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.