Systems and methods for patterning features in tantalum nitride (TaN) layer
US10672618B2 · kind B2 · utility
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16Claims
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Key dates
| Filing date | Jul 11, 2018 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Jul 11, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32449
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of systems and methods for patterning features in tantalum nitride (TaN) are described. In an embodiment, a method may include receiving a substrate comprising a TaN layer. The method may also include etching the substrate to expose at least a portion of the TaN layer. Additionally, the method may include performing a passivation process to reduce lateral etching of the TaN layer. The method may further include etching the TaN layer to form a feature therein, wherein the passivation process is controlled to meet one or more target passivation objectives.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.