Gradient atomic layer deposition
US10672652B2 · kind B2 · utility
0Cited by
1References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 29, 2018 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Jun 29, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76877
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device includes forming a barrier layer over a dielectric layer, a concentration of an impurity in the barrier layer increasing as the barrier layer extends away from the dielectric layer; and performing a plasma process to treat the barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.