Ya-Lien Lee
47Patents
4h-index
42Co-inventors
59Inventor score
Filing activity: Aug 31, 2012 → Aug 2, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8736056B2 | Device for reducing contact resistance of a metal | Electricity | 390 | Active |
| US8962473B2 | Method of forming hybrid diffusion barrier layer and semiconductor device thereof | Electricity | 10 | Active |
| US10312098B2 | Method of forming an interconnect structure | Electricity | 5 | Active |
| US10163644B2 | Interconnect structure including a conductive feature and a barrier layer on sidewalls and a bottom surface of the conductive feature and method of forming the same | Electricity | 4 | Active |
| US9659856B2 | Two step metallization formation | Electricity | 3 | Active |
| US9209072B2 | Global dielectric and barrier layer | Electricity | 2 | Active |
| US9214383B2 | Method of semiconductor integrated circuit fabrication | Electricity | 2 | Active |
| US10079176B2 | Method of using a barrier-seed tool for forming fine pitched metal interconnects | Electricity | 2 | Active |
| US9159666B2 | Device and method for reducing contact resistance of a metal | Electricity | 1 | Active |
| US9892963B2 | Device and method for reducing contact resistance of a metal | Electricity | 1 | Active |
| US11398406B2 | Selective deposition of metal barrier in damascene processes | Electricity | 1 | Active |
| US9941199B2 | Two step metallization formation | Electricity | 1 | Active |
| US11676898B2 | Diffusion barrier for semiconductor device and method | Electricity | 1 | Active |
| US10867800B2 | Method of forming an interconnect structure having a carbon-containing barrier layer | Electricity | 1 | Active |
| US10354914B2 | Global dielectric and barrier layer | Electricity | 1 | Active |
| US9818834B2 | Semiconductor device structure and method for forming the same | Electricity | 1 | Active |
| US10043706B2 | Mitigating pattern collapse | Electricity | 1 | Active |
| US9812397B2 | Method of forming hybrid diffusion barrier layer and semiconductor device thereof | Electricity | 0 | Active |
| US10672652B2 | Gradient atomic layer deposition | Electricity | 0 | Active |
| US10163719B2 | Method of forming self-alignment contact | Electricity | 0 | Active |
| US11851749B2 | Semiconductor device, method and machine of manufacture | Electricity | 0 | Active |
| US11742291B2 | Diffusion barrier layer for conductive via to decrease contact resistance | Electricity | 0 | Active |
| US11810857B2 | Via for semiconductor device and method | Electricity | 0 | Active |
| US11145542B2 | Global dielectric and barrier layer | Electricity | 0 | Active |
| US10950495B2 | Mitigating pattern collapse | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.