Electrostatic discharge protection structure, method for manufacturing an electrostatic discharge protection structure, and vertical thyristor structure

US10672758B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Vadim Valentinovic Vendt · Munich, DE
• Stefan Pompl · Landshut, DE
• Andre Schmenn · Sachsenkam, DE
• Joost Adriaan Willemen · Munich, DE

Key dates

• Filing date: Oct 18, 2017
• Grant date: Jun 2, 2020
• Expiry date: Mar 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/115

Abstract

According an embodiment, an electrostatic discharge protection structure includes: a semiconductor layer doped with a dopant of a first doping type, a first well region extending from a surface of the semiconductor layer into the semiconductor layer, wherein the first well region is doped with a dopant of a second doping type opposite the first doping type; a second well region next to the first well region and extending from the surface of the semiconductor layer into the semiconductor layer, wherein the second well region is doped with a dopant of the first doping type; an isolation structure extending from the surface of the semiconductor layer into the semiconductor layer with a depth similar to the depth of at least one of the first well region or the second well region, wherein the isolation structure is arranged laterally adjacent to the first well region and the second well region.