Semiconductor device including ultra low-k spacer and method for fabricating the same
US10672773B2 · kind B2 · utility
6Cited by
2References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2018 |
| Grant date | Jun 2, 2020 |
| Priority date | — |
| Expiry date | Nov 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/488
Abstract
A semiconductor device includes a bit line structure including a bit line contact plug and a bit line on the bit line contact plug, a storage node contact plug, an ultra low-k spacer including a gap-fill spacer contacting a side wall of the bit line contact plug and a line-type spacer contacting a side wall of the bit line, and a low-k spacer formed on the line-type spacer of the ultra low-k spacer to contact the storage node contact plug, wherein the gap-fill spacer is thicker than the line-type spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.