Patent · US Active

Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device

US10673207B2 · kind B2 · utility

0Cited by

1References

6Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Armin Dadgar · Berlin, DE
Andre Strittmatter · Magdeburg, DE
Christoph Berger · Oberburg, CH

Key dates

Filing date	Jun 2, 2016
Grant date	Jun 2, 2020
Priority date	—
Expiry date	Jun 2, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/8512
WIPO fieldOptics
WIPO sectorInstruments

Abstract

The invention relates to, inter alia, a light-emitting semiconductor component comprising the following: —a first mirror (102, 202, 302, 402, 502), —a first conductive layer (103, 203, 303, 403, 503), —a light-emitting layer sequence (104, 204, 304, 404, 504) on a first conductive layer face facing away from the first mirror, and—a second conductive layer (105, 205, 305, 405, 505) on a light-emitting layer sequence face facing away from the first conductive layer, wherein—the first mirror, the first conductive layer, the light-emitting layer sequence, and the second conductive layer are based on a III-nitride compound semiconductor material, —the first mirror is electrically conductive, and—the first mirror is a periodic sequence of homoepitaxial materials with varying refractive indices.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.