Andre Strittmatter
16Patents
2h-index
14Co-inventors
47Inventor score
Filing activity: Sep 18, 2009 → Jul 19, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8000371B2 | Vertical surface emitting semiconductor device | Electricity | 7 | Active |
| US8330144B2 | Semi-polar nitride-based light emitting structure and method of forming same | Electricity | 3 | Active |
| US9166375B2 | Vertical surface emitting semiconductor device | Electricity | 2 | Active |
| US8247249B2 | Semi-polar nitride-based light emitting structure and method of forming same | Electricity | 1 | Active |
| US11424596B2 | Semiconductor layer stack and method for producing same | Electricity | 1 | Active |
| US8212287B2 | Nitride semiconductor structure and method of making same | Electricity | 1 | Active |
| US8143647B2 | Relaxed InGaN/AlGaN templates | Electricity | 1 | Active |
| US11870220B2 | Semiconductor layer stack and method for producing same | Electricity | 0 | Active |
| US8652918B2 | Nitride semiconductor structure | Electricity | 0 | Active |
| US8349712B2 | Layer assembly | Emerging Cross-Sectional Technologies | 0 | Active |
| US9490608B2 | Electro-optical component | Electricity | 0 | Active |
| US8023546B2 | Semiconductor laser with integrated contact and waveguide | Electricity | 0 | Active |
| US9225145B2 | Electro-optical component | Electricity | 0 | Active |
| US8143154B2 | Relaxed InGaN/AlGaN templates | Electricity | 0 | Active |
| US8502197B2 | Layer assembly | Emerging Cross-Sectional Technologies | 0 | Active |
| US10673207B2 | Light-emitting semiconductor device, light-emitting semiconductor component and method for producing a light-emitting semiconductor device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.