Patent · US Active

Quantum device comprising FET transistors and qubits co-integrated on the same substrate

US10679139B2 · kind B2 · utility

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14Claims
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Assignee

Inventors

Key dates

Filing dateFeb 25, 2019
Grant dateJun 9, 2020
Priority date—
Expiry dateFeb 25, 2039

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D48/383
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Quantum device comprising: and wherein a width of the first lateral spacers is greater than that of the second lateral spacers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.