Non-volatile semiconductor memory device
US10680001B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 17, 2015 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Sep 1, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the non-volatile semiconductor memory device, a mobile charge collector layer, a mobile charge collecting contact, a mobile charge collecting first wiring layer, an in-between contact between the mobile charge collector layers, and a mobile charge collecting second wiring layer are disposed adjacent to a floating gate. Thereby, without increasing areas of active regions in the non-volatile semiconductor memory device, the number of mobile charges collected near the floating gate is reduced. The non-volatile semiconductor memory device allows high-speed operation of a memory cell while reducing fluctuations in a threshold voltage of the memory cell caused by collection of the mobile charges, which are attracted from an insulation layer, near the floating gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.