Isolated laterally diffused metal oxide semiconductor (LDMOS) transistor having low drain to body capacitance
US10680099B2 · kind B2 · utility
1Cited by
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13Claims
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Key dates
| Filing date | Feb 19, 2018 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | Feb 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/378
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A transistor, such as laterally diffused (LD) transistor, having a band region below a drift well is disclosed. The band region and drift well are oppositely doped. The band region is self-aligned to the drift well. The band region reduces the depth of the drift well. A shallower drift well reduces risk of punch-through, improving reliability. In addition, the shallower drift well reduces the drain to body parasitic capacitance which improves performance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.