Method for high-concentration doping of germanium with phosphorous
US10680413B2 · kind B2 · utility
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17References
12Claims
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Key dates
| Filing date | May 1, 2017 |
| Grant date | Jun 9, 2020 |
| Priority date | — |
| Expiry date | May 1, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3054
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for electrically doping a semiconducting material, a layer of germanium is formed having a germanium layer thickness, while in situ incorporating phosphorus dopant atoms at a concentration of at least about 5×1018 cm−3 through the thickness of the germanium layer during formation of the germanium layer. Additional phosphorus dopant atoms are ex situ incorporated through the thickness of the germanium layer, after formation of the germanium layer, to produce through the germanium layer thickness a total phosphorus dopant concentration of at least about 2×1019 cm−3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.