Patent · US Active

Bias circuit and method for a high-voltage RF switch

US10680605B2 · kind B2 · utility

1Cited by

1References

18Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Bernd Schleicher · Hersbruck, DE
Ruediger Bauder · Feldkirchen-Westerham, DE
Daniel Kehrer · Eferding, AT
Valentyn Solomko · Munich, DE

Key dates

Filing date	Feb 28, 2018
Grant date	Jun 9, 2020
Priority date	—
Expiry date	Feb 28, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH04B1/40
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

An RF switch includes series-coupled RF switch cells coupled between an RF input and ground, each RF switch cell having an input, and a biasing network having outputs for individually biasing each of the RF switch cell inputs to a distinct bias voltage based upon a rank number of the RF switch cell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.