Pattern-formation methods
US10684549B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 19, 2017 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Jan 12, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Pattern-formation methods comprise: (a) providing a substrate; (b) forming a photoresist pattern over the substrate; (c) applying a pattern treatment composition to the photoresist pattern, the pattern treatment composition comprising a solvent mixture comprising a first organic solvent and a second organic solvent, wherein the first organic solvent has a boiling point that is greater than a boiling point of the second organic solvent, and wherein the first organic solvent has a boiling point of 210° C. or more; and (d) thereafter heating the photoresist pattern. The methods find particular applicability in the manufacture of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.