Semiconductor device including volatile and non-volatile memory cells
US10685708B2 · kind B2 · utility
3Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 9, 2018 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Aug 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a substrate having a volatile memory region and a non-volatile memory region. The volatile memory region includes a cell capacitor disposed in the substrate and a cell transistor connected to the cell capacitor. The non-volatile memory region includes a plurality of non-volatile memory cells disposed on the substrate. The volatile memory region and the non-volatile memory region are disposed side by side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.