Jun-Hee Lim
42Patents
8h-index
52Co-inventors
78Inventor score
Filing activity: Jun 6, 1995 → Jul 6, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8901630B2 | Transistor, semiconductor device, and semiconductor module including the same | Electricity | 27 | Active |
| US5712503A | Metal oxide semiconductor and method of making the same | Electricity | 22 | Expired |
| US5552329A | Method of making metal oxide semiconductor transistors | Electricity | 20 | Expired |
| US5985711A | Method of fabricating semiconductor device | Electricity | 16 | Expired |
| US9082647B2 | Semiconductor devices | Electricity | 9 | Active |
| US5756389A | Method for forming trench isolation for semiconductor device | Electricity | 9 | Expired |
| US10896711B2 | Memory device with memory cell structure including ferroelectric data storage layer, and a first gate and a second gate | Physics | 8 | Active |
| US5780334A | Method of fabricating capacitor of semiconductor memory device | Electricity | 8 | Expired |
| US7982245B2 | Circuit with fuse/anti-fuse transistor with selectively damaged gate insulating layer | Electricity | 7 | Active |
| US10998301B2 | Semiconductor device | Electricity | 7 | Active |
| US6090682A | Isolation film of semiconductor device and method for fabricating the same comprising a lower isolation film with a upper isolation film formed on top | Electricity | 6 | Expired |
| US7800970B2 | Sense amplifier and semiconductor memory device having the same | Physics | 6 | Active |
| US8981480B2 | Semiconductor device having low resistivity region under isolation layer | Electricity | 5 | Active |
| US9240415B2 | Semiconductor device and method of forming the same | Electricity | 4 | Active |
| US11088163B2 | Semiconductor devices including upper and lower selectors | Electricity | 4 | Active |
| US10685708B2 | Semiconductor device including volatile and non-volatile memory cells | Electricity | 3 | Active |
| US10319427B2 | Semiconductor device | Electricity | 3 | Active |
| US9070701B2 | Semiconductor device | Electricity | 3 | Active |
| US10685695B2 | Semiconductor device | Electricity | 2 | Active |
| US9484203B2 | Methods of manufacturing semiconductor devices | Electricity | 2 | Active |
| US9196729B2 | Semiconductor device having buried channel array and method of manufacturing the same | Electricity | 2 | Active |
| US8268694B2 | Method of manufacturing a transistor and method of manufacturing a semiconductor device | Electricity | 1 | Active |
| US10763167B2 | Vertical semiconductor devices and method of manufacturing the same | Electricity | 1 | Active |
| US11056645B2 | Vertical memory devices | Electricity | 1 | Active |
| US7649380B2 | Logic circuits with electric field relaxation transistors and semiconductor devices having the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.