Radiation tolerant microstructured three dimensional semiconductor structure

US10685758B2 · kind B2 · utility

Assignee

• Lawrence Livermore National Security, LLC · US

Inventors

• Clint Frye · Livermore, US
• Roger A. Henderson · Livermore, US
• John Winter Murphy · Tracy, US
• Rebecca J. Nikolic · Oakland, US
• Dongxia Qu · Livermore, US
• Qinghui Shao · Fremont, US
• Mark A. Stoyer · Livermore, US
• Lars Voss · Livermore, US

Key dates

• Filing date: Apr 21, 2017
• Grant date: Jun 16, 2020
• Expiry date: Apr 21, 2037

Classification

• Technology area (CPC G): Physics
• CPC primary: G21H1/04
• WIPO field: Engines, pumps, turbines
• WIPO sector: Mechanical engineering

Abstract

According to one embodiment, a product includes an array of three dimensional structures, a cavity region between each of the three dimensional structures, and a first material in contact with at least one surface of each of the three dimensional structures. In addition, each of the three dimensional structures includes a semiconductor material, where at least one dimension of each of the three dimensional structures is in a range of about 0.5 microns to about 10 microns. Moreover, the first material is configured to provide high energy particle and/or ray emissions.