Wordline strapping for non-volatile memory elements
US10685951B1 · kind B1 · utility
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7References
18Claims
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Key dates
| Filing date | Dec 10, 2018 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Dec 10, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C5/025
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Structures for a non-volatile memory and methods for fabricating such structures. An active array region of a memory structure includes a plurality of active bitcells and a wordline. Dummy bitcells of the memory structure are arranged in a column within the active array region. An interconnect structure includes a metallization level having a wordline strap that extends across the active array region and that is arranged over the active array region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.