Solid phase epitaxy of 3C-SiC on Si(001)

US10686041B2 · kind B2 · utility

Assignee

• The Government of the United States of America, as represented by the Secretary of the Navy · US

Inventors

• Connie H. Li · Alexandria, US
• Glenn G. Jernigan · Waldorf, US
• Berend T. Jonker · Waldorf, US
• Ramasis Goswami · Stony Brook, US
• Carl S. Hellberg · Bethesda, US

Key dates

• Filing date: Apr 6, 2017
• Grant date: Jun 16, 2020
• Expiry date: Oct 6, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/405
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A 3C—SiC buffer layer on Si(001) comprising a porous buffer layer of 3C—SiC on a Si(001) substrate, wherein the porous buffer layer is produced through a solid state reaction, and wherein an amorphous carbon layer on the Si(001) substrate is deposited by magnetron sputtering of a C target at room temperature at a rate of 0.8 nm/min.