Fin field effect transistor structure with particular gate appearance
US10686079B1 · kind B1 · utility
0Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 8, 2019 |
| Grant date | Jun 16, 2020 |
| Priority date | — |
| Expiry date | Jan 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A fin field effect transistor structure with particular gate appearance is provided in this disclosure, featuring a fin on a substrate and a gate on the substrate and traversing over the fin, wherein the fin is divided into an upper portion on a top surface of the fin and a lower portion on two sides of the fin, and the lower portion of the gate has protrusions laterally protruding in said first direction at positions abutting to the fin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.