Use of selective aluminum oxide etch
US10692728B2 · kind B2 · utility
3Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 2018 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Sep 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide and/or silicon nitride are described. Certain embodiments relate to the formation of fin-etched substrates. Other embodiments relate to the removal of source drain caps from substrates. Further embodiments relate to the processing of substrates comprising vias and/or metal contacts with bottom etch stop layers and/or liner layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.