Multilayers of nickel alloys as diffusion barrier layers
US10692830B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Jul 18, 2018 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Jul 18, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3656
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure for a semiconductor device includes a copper (Cu) layer and a first nickel (Ni) alloy layer with a Ni grain size a1. The structure also includes a second Ni alloy layer with a Ni grain size a2, wherein a1<a2. The first Ni alloy layer is between the Cu layer and the second Ni alloy layer. The structure further includes a tin (Sn) layer. The second Ni alloy layer is between the first Ni alloy layer and the Sn layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.