Semiconductor device and manufacturing method of the same
US10693013B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 5, 2016 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Apr 5, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/184
Abstract
A minute transistor with low parasitic capacitance, high frequency characteristics, favorable electrical characteristics, stable electrical characteristics, and low off-state current is provided. A semiconductor device includes a semiconductor over a substrate, a source and a drain over the semiconductor, a first insulator over the source and the drain, a second insulator over the semiconductor, a third insulator in contact with a side surface of the first insulator and over the second insulator, and a gate over the third insulator. The semiconductor includes a first region overlapping with the source, a second region overlapping with the drain, and a third region overlapping with the gate. The length between a top surface of the third region of the semiconductor and a bottom surface of the gate is longer than the length between the first region and the third region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.