Patent · US Active

Inverted metamorphic multijunction solar cells with doped alpha layer

US10693029B1 · kind B1 · utility

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19Claims
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Key dates

Filing dateMar 8, 2017
Grant dateJun 23, 2020
Priority date
Expiry dateAug 3, 2037

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A method of forming a multijunction solar cell comprising at least a first subcell and a second subcell, the method including forming a first alpha layer over said first solar subcell using a surfactant and dopant including selenium or tellurium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium or tellurium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming the second solar subcell over said grading interlayer such that the second solar subcell is lattice mismatched with respect to the first solar subcell.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.