Inverted metamorphic multijunction solar cells with doped alpha layer
US10693029B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2017 |
| Grant date | Jun 23, 2020 |
| Priority date | — |
| Expiry date | Aug 3, 2037 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method of forming a multijunction solar cell comprising at least a first subcell and a second subcell, the method including forming a first alpha layer over said first solar subcell using a surfactant and dopant including selenium or tellurium, the first alpha layer configured to prevent threading dislocations from propagating; forming a metamorphic grading interlayer over and directly adjacent to said first alpha layer; forming a second alpha layer using a surfactant and dopant including selenium or tellurium over and directly adjacent to said grading interlayer to prevent threading dislocations from propagating; and forming the second solar subcell over said grading interlayer such that the second solar subcell is lattice mismatched with respect to the first solar subcell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.