Patent · US Active

Infrared emitter arrangement and method for producing an infrared emitter arrangement

US10694584B2 · kind B2 · utility

0Cited by

1References

24Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Stephan Pindl · Ergoldsbach, DE
Daniel Porwol · Straubing, DE
Johann Strasser · Schierling, DE

Key dates

Filing date	Nov 21, 2017
Grant date	Jun 23, 2020
Priority date	—
Expiry date	Nov 21, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH05B2203/017
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. The carrier includes at least one infrared emitter structure at a first side of the carrier and at least one cutout at a second side of the carrier, said second side being situated opposite the first side of the carrier, wherein the at least one cutout extends from the second side of the carrier in the direction of the at least one infrared emitter structure. The method further includes securing an infrared filter layer structure at the second side of the carrier in such a way that the at least one cutout separates the at least one infrared emitter structure from the infrared filter layer structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.