Method for oxidizing a silicon carbide based on microwave plasma at an AC voltage
US10699898B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2019 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Feb 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02252
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for oxidizing a silicon carbide based on microwave plasma at an AC voltage, including: step one, providing a silicon carbide substrate, and placing the silicon carbide substrate in a microwave plasma generating device; step two, introducing oxygen-containing gas to generate oxygen plasma at an AC voltage; step three, controlling movements of oxygen ions and electrons in the oxygen plasma by the AC voltage to generate an oxide layer having a predetermined thickness on the silicon carbide substrate, wherein when a voltage of the silicon carbide substrate is negative, the oxygen ions move close to an interface and perform an oxidation reaction with the silicon carbide, and when the voltage of the silicon carbide substrate is positive, the electrons move close to the interface and perform a reduction reaction with the silicon carbide, removing carbon residue; step four, stopping the introduction of oxygen-containing gas and the reaction completely.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.