Shengkai Wang
7Patents
2h-index
14Co-inventors
37Inventor score
Filing activity: Jul 16, 2015 → Jun 20, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10750606B1 | Microwave plasma equipment and method of exciting plasma | Electricity | 6 | Active |
| US10192963B2 | Composite gate dielectric layer applied to group III-V substrate and method for manufacturing the same | Electricity | 4 | Active |
| US10644100B2 | Dual-gate PMOS field effect transistor with InGaAs channel | Electricity | 0 | Active |
| US10730705B2 | Loading and unloading device for a solid state disk test system | Electricity | 0 | Active |
| US10734199B2 | Microwave plasma generating device for plasma oxidation of SiC | Electricity | 0 | Active |
| US10763105B2 | Method for manufacturing grooved MOSFET device based on two-step microwave plasma oxidation | Electricity | 0 | Active |
| US10699898B2 | Method for oxidizing a silicon carbide based on microwave plasma at an AC voltage | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.