Method for forming thin film
US10699900B2 · kind B2 · utility
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20Claims
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Assignee
Inventors
Key dates
| Filing date | May 10, 2019 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | May 10, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31122
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a method for forming a thin film. The method for forming the thin film includes forming a first thin film having a first thickness with first crystallinity through an atomic layer deposition process and etching the first thin film by a predetermined thickness through an atomic layer etching process with respect to the first thin film to form a second thin film having a second thickness less than the first thickness.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.