Patent · US Active

Process for producing a strained layer based on germanium-tin

US10699902B2 · kind B2 · utility

1Cited by

0References

14Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

Vincent Reboud · Paris, FR
Jean-Michel Hartmann · Grenoble, FR
Alexei Tchelnokov · Meylan, FR
Vincent Calvo · Fontaine, FR

Key dates

Filing date	Aug 23, 2017
Grant date	Jun 30, 2020
Priority date	—
Expiry date	Aug 23, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/01
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention pertains to a process for producing a strained layer based on germanium-tin (GeSn). The process includes a step of producing a semiconductor stack containing a layer based on GeSn and having an initial strain value that is non-zero; a step of structuring the semiconductor stack so as to form a structured portion and a peripheral portion, the structured portion including a central section linked to the peripheral portion by at least two lateral sections having an average width greater than an average width of the central section; and a step of suspending the structured portion, the central section then having a final strain value higher than the initial value.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.