Methods for processing semiconductor wafers having a polycrystalline finish
US10699908B2 · kind B2 · utility
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1References
16Claims
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Key dates
| Filing date | May 26, 2016 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Oct 23, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of processing a semiconductor wafer includes depositing a silicon layer on the semiconductor wafer. The silicon layer has a substantially uniform thickness. The silicon layer is polished to smooth the silicon layer such that the thickness is substantially uniform after polishing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.