Semiconductor device with low resistivity contact structure and method for forming the same
US10700177B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2018 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | May 7, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/259
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes providing a semiconductor substrate including a conductive region made of silicon, germanium or a combination thereof. The method also includes forming an insulating layer over the semiconductor substrate and forming an opening in the insulating layer to expose the conductive region. The method also includes performing a deposition process to form a metal layer over a sidewall and a bottom of the opening, so that a metal silicide or germanide layer is formed on the exposed conductive region by the deposition process. The method also includes performing a first in-situ etching process to etch at least a portion of the metal layer and forming a fill metal material layer in the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.