Semiconductor device, and manufacturing method for same
US10700210B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 2015 |
| Grant date | Jun 30, 2020 |
| Priority date | — |
| Expiry date | Nov 19, 2035 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1345
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor device includes a substrate and a thin film transistor supported by the substrate. The thin film transistor includes a gate electrode, an oxide semiconductor layer, a gate insulating layer provided between the gate electrode and the oxide semiconductor layer, and source and drain electrodes electrically connected to the oxide semiconductor layer. The gate insulating layer includes a first portion which is covered with the oxide semiconductor layer and a second portion which is adjacent to the first portion and which is not covered with any of the oxide semiconductor layer, the source electrode and the drain electrode. The second portion is smaller in thickness than the first portion, and the difference in thickness between the second portion and the first portion is more than 0 nm and not more than 50 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.