Logic switching device and method of manufacturing the same
US10702940B2 · kind B2 · utility
1Cited by
2References
24Claims
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Assignee
Inventors
Key dates
| Filing date | Apr 23, 2019 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Apr 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/685
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Provided are a logic switching device and a method of manufacturing the same. The logic switching device may include a domain switching layer adjacent to a gate electrode. The domain switching layer may include a ferroelectric material region and an anti-ferroelectric material region. The domain switching layer may be a non-memory element. The logic switching device may include a channel, a source and a drain both connected to the channel, the gate electrode arranged to face the channel, and the domain switching layer provided between the channel and the gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.