Sanghyun Jo
59Patents
3h-index
21Co-inventors
58Inventor score
Filing activity: May 24, 2017 → Apr 12, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US10714500B2 | Electronic device and method of manufacturing the same | Physics | 9 | Active |
| US10553684B2 | Optical sensor and image sensor including graphene quantum dots | Emerging Cross-Sectional Technologies | 5 | Active |
| US11145731B2 | Electronic device and method of manufacturing the same | Electricity | 4 | Active |
| US11527646B2 | Domain switching devices and methods of manufacturing the same | Electricity | 3 | Active |
| US11177283B2 | Electronic device and method of manufacturing the same | Physics | 2 | Active |
| US11417763B2 | Integrated circuit including transistors and a method of manufacturing the same | Electricity | 2 | Active |
| US11349026B2 | Electronic device including ferroelectric layer | Electricity | 2 | Active |
| US11527635B2 | Ferroelectric thin-film structures, methods of manufacturing the same, and electronic devices including the ferroelectric thin-film structures | Electricity | 1 | Active |
| US11973142B2 | Integrated circuit including transistors and a method of manufacturing the same | Electricity | 1 | Active |
| US11018001B2 | Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same | Electricity | 1 | Active |
| US11677025B2 | Electronic device including ferroelectric layer | Electricity | 1 | Active |
| US11711923B2 | Electronic device and method of manufacturing the same | Physics | 1 | Active |
| US10702940B2 | Logic switching device and method of manufacturing the same | Electricity | 1 | Active |
| US11600712B2 | Ferroelectric structure including a ferroelectric film having a net polarization oriented to a polarization enhancement film and semiconductor device including the same | Electricity | 1 | Active |
| US11862705B2 | Electronic devices and methods of manufacturing the same | Physics | 1 | Active |
| US10741389B2 | Method of growing two-dimensional transition metal dichalcogenide thin film and method of manufacturing device including the same | Electricity | 1 | Active |
| US12266710B2 | Thin film structure, semiconductor device including the same, and semiconductor apparatus including semiconductor device | Electricity | 0 | Active |
| US11894469B2 | Resonant tunneling devices including two-dimensional semiconductor materials and methods of detecting physical properties using the same | Performing Operations; Transporting | 0 | Active |
| US11646375B2 | Ferroelectric thin-film structure and electronic device including the same | Electricity | 0 | Active |
| US11626489B2 | Optical sensor and image sensor including graphene quantum dots | Emerging Cross-Sectional Technologies | 0 | Active |
| US11862704B2 | Electronic device and method of manufacturing the same | General | 0 | Revoked |
| US12382670B2 | Thin film structure and semiconductor device comprising the same | Electricity | 0 | Active |
| US12132109B2 | Ferroelectric semiconductor device and method of extracting defect density of the same | Electricity | 0 | Active |
| US11239274B2 | Image sensor for high photoelectric conversion efficiency and low dark current | Emerging Cross-Sectional Technologies | 0 | Active |
| US12089416B2 | Electronic device and method of manufacturing the same | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.