Spatial and temporal control of ion bias voltage for plasma processing
US10707055B2 · kind B2 · utility
47Cited by
85References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2018 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Nov 16, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.