Patent · US Active

MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof

US10707202B2 · kind B2 · utility

0Cited by

4References

16Claims

0Family size

Assignee

STMicroelectronics SA

Inventors

Mario Giuseppe Saggio · Nettuno, IT
Simone RASCUNÁ · Catania, IT

Key dates

Filing date	Jul 3, 2018
Grant date	Jul 7, 2020
Priority date	—
Expiry date	Jul 3, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/146
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An integrated MOSFET device is formed in a body of silicon carbide and with a first type of conductivity. The body accommodates a first body region, with a second type of conductivity; a JFET region adjacent to the first body region; a first source region, with the first type of conductivity, extending into the interior of the first body region; an implanted structure, with the second type of conductivity, extending into the interior of the JFET region. An isolated gate structure lies partially over the first body region, the first source region and the JFET region. A first metallization layer extends over the first surface and forms, in direct contact with the implanted structure and with the JFET region, a JBS diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.