Simone RASCUNÁ
30Patents
3h-index
19Co-inventors
56Inventor score
Filing activity: Jan 8, 2008 → Feb 16, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8901652B2 | Power MOSFET comprising a plurality of columnar structures defining the charge balancing region | Electricity | 5 | Active |
| US7838927B2 | Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device | Electricity | 3 | Active |
| US8012832B2 | Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding device | Electricity | 3 | Active |
| US9748411B2 | Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereof | Electricity | 2 | Active |
| US11869944B2 | Scalable MPS device based on SiC | Electricity | 1 | Active |
| US11495508B2 | Silicon carbide power device with improved robustness and corresponding manufacturing process | Electricity | 1 | Active |
| US11715769B2 | Silicon carbide diode with reduced voltage drop, and manufacturing method thereof | Electricity | 1 | Active |
| US12125933B2 | Method for manufacturing a uv-radiation detector device based on sic, and uv- radiation detector device based on sic | Emerging Cross-Sectional Technologies | 0 | Active |
| US12426285B2 | Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS device | Electricity | 0 | Active |
| US10276729B2 | Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereof | Electricity | 0 | Active |
| US11916066B2 | MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof | Electricity | 0 | Active |
| US12094985B2 | Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereof | Electricity | 0 | Active |
| US11949025B2 | Wide band gap semiconductor electronic device having a junction-barrier Schottky diode | Electricity | 0 | Active |
| US12302624B2 | Wide band gap semiconductor electronic device having a junction-barrier Schottky diode | Electricity | 0 | Active |
| US12364021B2 | Overvoltage protection device | Electricity | 0 | Active |
| US11417778B2 | Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereof | Electricity | 0 | Active |
| US9711599B2 | Wide bandgap high-density semiconductor switching device and manufacturing process thereof | Electricity | 0 | Active |
| US12224321B2 | Scalable MPS device based on SiC | Electricity | 0 | Active |
| US12249624B2 | Ohmic contact formation in a SiC-based electronic device | Electricity | 0 | Active |
| US11605751B2 | Method for manufacturing a UV-radiation detector device based on SiC, and UV-radiation detector device based on SiC | Emerging Cross-Sectional Technologies | 0 | Active |
| US11018008B2 | Manufacturing method of a semiconductor device with efficient edge structure | Electricity | 0 | Active |
| US10707202B2 | MOSFET device of silicon carbide having an integrated diode and manufacturing process thereof | Electricity | 0 | Active |
| US11532606B2 | Overvoltage protection device | Electricity | 0 | Active |
| US12224358B2 | JBS device with improved electrical performances, and manufacturing process of the JBS device | Electricity | 0 | Active |
| US11670685B2 | Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic device | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.