Methods and processes for forming devices from correlated electron material (CEM)
US10707415B2 · kind B2 · utility
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17Claims
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Key dates
| Filing date | Nov 26, 2018 |
| Grant date | Jul 7, 2020 |
| Priority date | — |
| Expiry date | Nov 26, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform specified application performance parameters. In embodiments, CEM devices fabricated at a first stage of a wafer fabrication process, such as a front-end-of-line stage, may differ from CEM devices fabricated at a second stage of a wafer fabrication process, such as a middle-of-line stage or a back-end-of-line stage, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.