Aqueous silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of using them
US10711158B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Sep 28, 2017 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Sep 28, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions, such as for semiconductor substrates, comprising an abrasive of one or more dispersions of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, and one or more amine carboxylic acids having an isoelectric point (pI) below 5, preferably, acidic amine carboxylic acids or pyridine acids, wherein the compositions have a pH of from 2 to 5. The compositions enable polishing at a high oxide:nitride removal rate ratio.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.