Silicon carbide epitaxial wafer manufacturing method, silicon carbide semiconductor device manufacturing method and silicon carbide epitaxial wafer manufacturing apparatus
US10711372B2 · kind B2 · utility
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Key dates
| Filing date | Jun 3, 2019 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Jun 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon carbide epitaxial wafer manufacturing method includes: a stabilization step of nitriding, oxidizing or oxynitriding and stabilizing silicon carbide attached to an inner wall surface of a growth furnace; after the stabilization step, a bringing step of bringing a substrate in the growth furnace; and after the bringing step, a growth step of epitaxially growing a silicon carbide epitaxial layer on the substrate by supplying a process gas into the growth furnace to manufacture a silicon carbide epitaxial wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.