Radiation source apparatus, EUV lithography system, and method for decreasing debris in EUV lithography system
US10712676B2 · kind B2 · utility
1Cited by
10References
20Claims
0Family size
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Key dates
| Filing date | Nov 6, 2019 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Nov 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05G2/0094
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A radiation source apparatus is provided. The radiation source apparatus includes a chamber, a target droplet generator, an exhaust module, a measuring device, and a controller. The target droplet generator is configured to provide a plurality of target droplets to the chamber. The exhaust module is configured to extract debris corresponding to the target droplets out of the chamber according to a first gas flow rate. The measuring device is configured to measure concentration of the debris in the chamber. The controller is configured to adjust the first gas flow rate according to the measured concentration of the debris.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.